Vishay Siliconix TrenchFET N-Channel MOSFET, 12.3 A, 250 V, 8-Pin SO-8 Si7434ADP-T1-RE3

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

12.3 A

Maximum Drain Source Voltage

250 V

Package Type

SO-8

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

170 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

54.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

5mm

Length

5.99mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

10.9 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

1.07mm

Forward Diode Voltage

1.2V