Infineon HEXFET P-Channel MOSFET, 6.2 A, 40 V, 8-Pin SOIC IRF7241PBF
- RS Stock No.:
- 178-1527
- Mfr. Part No.:
- IRF7241PBF
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 178-1527
- Mfr. Part No.:
- IRF7241PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 6.2 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | SOIC | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 41 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 5mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 53 nC @ 10 V | |
| Width | 4mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Height | 1.5mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 6.2 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type SOIC | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 41 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 5mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 53 nC @ 10 V | ||
Width 4mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
Infineon HEXFET Series MOSFET, 6.2A Maximum Continuous Drain Current, 2.5W Maximum Power Dissipation - IRF7241TRPBF
This MOSFET is designed for efficient power management in electronic circuits. With a P-channel configuration and a continuous drain current capability of 6.2A, it is suitable for various applications. Operating in enhancement mode further enhances its adaptability across different electronic devices, making it an essential component in automation and electrical systems.
Features & Benefits
• Supports a maximum drain-source voltage of 40V for strong performance
• Low on-resistance of 70mΩ improves efficiency and minimises heat generation
• Can withstand a maximum operating temperature of +150°C
• Broad gate voltage range allows for flexible design integration
• Single transistor configuration simplifies circuit layout and saves space
• Typical gate charge of 53nC at 10V enables quick switching
Applications
• Utilised in power management systems for automation
• Appropriate for driving loads in consumer electronics
• Employed in power conversion and regulation circuits
• Incorporated into various electrical industry
• Integrated into motor control and industrial automation systems
What is the significance of the low RDS(on) measurement?
A low RDS(on) measurement indicates lower power losses during operation, leading to improved efficiency and reduced heat generation.
How does the maximum gate-source voltage affect performance?
The maximum gate-source voltage range allows for wider compatibility with different driver circuits, ensuring reliable switching across various operating conditions.
What precautions should be taken during installation?
Ensure proper thermal management and verify that the operating conditions stay within the specified maximum ratings, particularly for voltage and temperature.
How does enhancement mode behaviour affect circuit design?
Enhancement mode operation means the transistor is off at zero gate voltage, resulting in lower power consumption during standby and enhancing overall circuit reliability.