Infineon HEXFET N-Channel MOSFET, 4.5 A, 100 V, 8-Pin SOIC IRF7452PBF
- RS Stock No.:
- 178-1526
- Mfr. Part No.:
- IRF7452PBF
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 178-1526
- Mfr. Part No.:
- IRF7452PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 4.5 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | SOIC | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 60 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5.5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Typical Gate Charge @ Vgs | 33 nC @ 10 V | |
| Width | 4mm | |
| Number of Elements per Chip | 1 | |
| Length | 5mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.5mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 4.5 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type SOIC | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 60 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5.5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 33 nC @ 10 V | ||
Width 4mm | ||
Number of Elements per Chip 1 | ||
Length 5mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 1.5mm | ||
The Infineon IRF7452 is the 100V single N-channel HEXFET power MOSFET in a SO-8 package.
Fully characterized avalanche voltage and current
Low gate to drain charge to reduce switching losses
Low gate to drain charge to reduce switching losses