Infineon HEXFET N-Channel MOSFET, 119 A, 40 V, 3-Pin DPAK IRFR4104PBF

Unavailable
RS will no longer stock this product.
RS Stock No.:
178-1511
Mfr. Part No.:
IRFR4104PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

119 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

140 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

59 nC @ 10 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Height

2.39mm

Minimum Operating Temperature

-55 °C

The Infineon IRFR4104 is the 40V single N-channel HEXFET power MOSFET in a D-Pak package. This HEXFET power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area.

Advanced process technology
Ultra low on resistance
175°C operating temperature
Fast switching