Infineon HEXFET N-Channel MOSFET, 88 A, 100 V, 3-Pin TO-220AB IRFB4410PBF

Unavailable
RS will no longer stock this product.
RS Stock No.:
178-1472
Mfr. Part No.:
IRFB4410PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

88 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

10 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

120 nC @ 10 V

Length

10.66mm

Transistor Material

Si

Width

4.82mm

Number of Elements per Chip

1

Height

9.02mm

Minimum Operating Temperature

-55 °C

The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Industry standard through-hole power package

High-current rating