N-Channel MOSFET, 45 A, 250 V, 3-Pin D2PAK Infineon IRFS4229PBF
- RS Stock No.:
- 178-1418
- Mfr. Part No.:
- IRFS4229PBF
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 178-1418
- Mfr. Part No.:
- IRFS4229PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
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Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 45 A | |
| Maximum Drain Source Voltage | 250 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 48 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 330 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Typical Gate Charge @ Vgs | 72 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.67mm | |
| Number of Elements per Chip | 1 | |
| Width | 9.65mm | |
| Transistor Material | Si | |
| Series | HEXFET | |
| Minimum Operating Temperature | -40 °C | |
| Height | 4.83mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 45 A | ||
Maximum Drain Source Voltage 250 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 48 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 330 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 72 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Width 9.65mm | ||
Transistor Material Si | ||
Series HEXFET | ||
Minimum Operating Temperature -40 °C | ||
Height 4.83mm | ||
The Infineon IRFS4229 is the 250V single N-channel HEXFET power MOSFET PDP switch in a D2-Pak package. This HEXFET power MOSFET is specifically designed for sustain, energy recovery and past switch application.
175°C operating junction temperature for improved ruggedness
Repetitive avalanche capability for robustness and reliability
Repetitive avalanche capability for robustness and reliability