STMicroelectronics MDmesh M2 N-Channel MOSFET, 7.5 A, 650 V, 3-Pin TO-220FP STFH10N60M2
- RS Stock No.:
- 178-1404
- Mfr. Part No.:
- STFH10N60M2
- Brand:
- STMicroelectronics
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 178-1404
- Mfr. Part No.:
- STFH10N60M2
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 7.5 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-220FP | |
| Series | MDmesh M2 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 600 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 25 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Length | 11.1mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 13.5 nC @ 10 V | |
| Width | 4.8mm | |
| Transistor Material | Si | |
| Height | 16.2mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.6V | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 7.5 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-220FP | ||
Series MDmesh M2 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 600 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 25 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Length 11.1mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 13.5 nC @ 10 V | ||
Width 4.8mm | ||
Transistor Material Si | ||
Height 16.2mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.6V | ||