P-Channel MOSFET, 3.1 A, 100 V, 3-Pin IPAK Vishay IRFU9110PBF
- RS Stock No.:
- 178-0905
- Mfr. Part No.:
- IRFU9110PBF
- Brand:
- Vishay
Bulk discount available
Subtotal (1 tube of 75 units)*
£88.95
(exc. VAT)
£106.725
(inc. VAT)
Stock information currently inaccessible
Units | Per unit | Per Tube* |
|---|---|---|
| 75 - 75 | £1.186 | £88.95 |
| 150 - 300 | £1.115 | £83.63 |
| 375 + | £1.008 | £75.60 |
*price indicative
- RS Stock No.:
- 178-0905
- Mfr. Part No.:
- IRFU9110PBF
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 3.1 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | IPAK (TO-251) | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.2 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 8.7 nC @ 10 V | |
| Width | 2.38mm | |
| Length | 6.73mm | |
| Transistor Material | Si | |
| Height | 6.22mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 3.1 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type IPAK (TO-251) | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.2 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 8.7 nC @ 10 V | ||
Width 2.38mm | ||
Length 6.73mm | ||
Transistor Material Si | ||
Height 6.22mm | ||
Minimum Operating Temperature -55 °C | ||
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