Vishay N-Channel MOSFET, 8 A, 500 V, 3-Pin D2PAK IRF840SPBF

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Subtotal (1 tube of 50 units)*

£52.25

(exc. VAT)

£62.70

(inc. VAT)

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  • 50 unit(s) ready to ship
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Per unit
Per Tube*
50 - 50£1.045£52.25
100 - 200£0.888£44.40
250 +£0.836£41.80

*price indicative

RS Stock No.:
178-0872
Mfr. Part No.:
IRF840SPBF
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

500 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

850 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

9.65mm

Length

10.41mm

Typical Gate Charge @ Vgs

63 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

4.83mm

COO (Country of Origin):
CN

N-Channel MOSFET, 500V, Vishay Semiconductor


The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.

Dynamic dV/dt rating
Repetitive avalanche rated
Simple drive requirement


MOSFET Transistors, Vishay Semiconductor

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