Microchip TP2540 P-Channel MOSFET, 125 mA, 400 V, 3-Pin TO-243AA TP2540N8-G
- RS Stock No.:
- 177-9867P
- Mfr. Part No.:
- TP2540N8-G
- Brand:
- Microchip
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Units | Per unit |
|---|---|
| 25 - 95 | £1.38 |
| 100 + | £1.326 |
*price indicative
- RS Stock No.:
- 177-9867P
- Mfr. Part No.:
- TP2540N8-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 125 mA | |
| Maximum Drain Source Voltage | 400 V | |
| Package Type | TO-243AA | |
| Series | TP2540 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 30 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.4V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 1.6 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Width | 2.6mm | |
| Length | 4.6mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.8V | |
| Height | 1.6mm | |
Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type P | ||
Maximum Continuous Drain Current 125 mA | ||
Maximum Drain Source Voltage 400 V | ||
Package Type TO-243AA | ||
Series TP2540 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 30 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.4V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 1.6 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Width 2.6mm | ||
Length 4.6mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.8V | ||
Height 1.6mm | ||
- COO (Country of Origin):
- TW
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Low threshold (-2.4V max.)
High input impedance
Low input capacitance (60pF typical)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
High input impedance
Low input capacitance (60pF typical)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage