Microchip TN2106 N-Channel MOSFET, 300 mA, 60 V, 3-Pin TO-92 TN2106N3-G
- RS Stock No.:
- 177-9850P
- Mfr. Part No.:
- TN2106N3-G
- Brand:
- Microchip
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Units | Per unit |
|---|---|
| 40 - 80 | £0.473 |
| 100 + | £0.428 |
*price indicative
- RS Stock No.:
- 177-9850P
- Mfr. Part No.:
- TN2106N3-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 300 mA | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TO-92 | |
| Series | TN2106 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 5 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 0.6V | |
| Maximum Power Dissipation | 740 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Length | 5.08mm | |
| Width | 4.06mm | |
| Height | 5.33mm | |
| Forward Diode Voltage | 1.8V | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type N | ||
Maximum Continuous Drain Current 300 mA | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-92 | ||
Series TN2106 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 5 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 0.6V | ||
Maximum Power Dissipation 740 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 5.08mm | ||
Width 4.06mm | ||
Height 5.33mm | ||
Forward Diode Voltage 1.8V | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- TW
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain