Microchip TN2106 N-Channel MOSFET, 280 mA, 60 V, 3-Pin SOT-23 TN2106K1-G
- RS Stock No.:
- 177-9842P
- Mfr. Part No.:
- TN2106K1-G
- Brand:
- Microchip
Subtotal 20 units (supplied on a continuous strip)*
£8.08
(exc. VAT)
£9.70
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,480 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 20 + | £0.404 |
*price indicative
- RS Stock No.:
- 177-9842P
- Mfr. Part No.:
- TN2106K1-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 280 mA | |
| Maximum Drain Source Voltage | 60 V | |
| Series | TN2106 | |
| Package Type | TO-236 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 5 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 0.6V | |
| Maximum Power Dissipation | 360 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 3.04mm | |
| Width | 1.4mm | |
| Number of Elements per Chip | 1 | |
| Forward Diode Voltage | 1.8V | |
| Height | 1.02mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type N | ||
Maximum Continuous Drain Current 280 mA | ||
Maximum Drain Source Voltage 60 V | ||
Series TN2106 | ||
Package Type TO-236 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 5 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 0.6V | ||
Maximum Power Dissipation 360 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Maximum Operating Temperature +150 °C | ||
Length 3.04mm | ||
Width 1.4mm | ||
Number of Elements per Chip 1 | ||
Forward Diode Voltage 1.8V | ||
Height 1.02mm | ||
Minimum Operating Temperature -55 °C | ||
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain