Microchip 2N6661 Type N-Channel MOSFET, 350 mA, 90 V Enhancement, 3-Pin TO-39
- RS Stock No.:
- 177-9750P
- Mfr. Part No.:
- 2N6661
- Brand:
- Microchip
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£11.62
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£13.94
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Units | Per unit |
|---|---|
| 1 + | £11.62 |
*price indicative
- RS Stock No.:
- 177-9750P
- Mfr. Part No.:
- 2N6661
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 350mA | |
| Maximum Drain Source Voltage Vds | 90V | |
| Series | 2N6661 | |
| Package Type | TO-39 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 6.25W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 6.6mm | |
| Width | 9.398 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 350mA | ||
Maximum Drain Source Voltage Vds 90V | ||
Series 2N6661 | ||
Package Type TO-39 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 6.25W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 6.6mm | ||
Width 9.398 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Microchip Technology MOSFET
The Microchip Technology through-hole mount N-channel MOSFET is a new age product with a drain-source voltage of 90V and a maximum gate-source voltage of 20V. It has drain-source resistance of 4ohms at a gate-source voltage of 10V. It has continuous drain current of 350mA and maximum power dissipation of 6.25W. The minimum and a maximum driving voltage for this MOSFET is 5V and 10V respectively. The MOSFET is an enhancement mode (normally off) MOSFET that utilizes a vertical DMOS structure and well-proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. A significant characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. This vertical DMOS FET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Ease of paralleling
• Excellent thermal stability
• Free from secondary breakdown
• High input impedance and high gain
• Integral source drain diode
• Low CISS and fast switching speeds
• Low power drive requirement
• Operating temperature ranges between -55°C and 150°C
Applications
• Amplifiers
• Converters
• Drivers: relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.
• Motor controls
• Power supply circuits
• Switches
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007