Microchip VN2460 N-Channel MOSFET, 200 mA, 600 V, 3-Pin TO-243AA VN2460N8-G

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Packaging Options:
RS Stock No.:
177-9730
Mfr. Part No.:
VN2460N8-G
Brand:
Microchip
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Brand

Microchip

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

600 V

Series

VN2460

Package Type

TO-243AA

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

25 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

1.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

2.6mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

4.6mm

Height

1.6mm

Forward Diode Voltage

1.5V

Minimum Operating Temperature

-55 °C

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain