Microchip VN2460 N-Channel MOSFET, 200 mA, 600 V, 3-Pin TO-243AA VN2460N8-G
- RS Stock No.:
- 177-9730
- Mfr. Part No.:
- VN2460N8-G
- Brand:
- Microchip
Bulk discount available
Subtotal (1 pack of 10 units)*
£12.30
(exc. VAT)
£14.80
(inc. VAT)
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 20 | £1.23 | £12.30 |
| 30 - 90 | £1.166 | £11.66 |
| 100 + | £1.05 | £10.50 |
*price indicative
- RS Stock No.:
- 177-9730
- Mfr. Part No.:
- VN2460N8-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 200 mA | |
| Maximum Drain Source Voltage | 600 V | |
| Series | VN2460 | |
| Package Type | TO-243AA | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 25 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 1.5V | |
| Maximum Power Dissipation | 1.6 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 4.6mm | |
| Width | 2.6mm | |
| Number of Elements per Chip | 1 | |
| Height | 1.6mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.5V | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type N | ||
Maximum Continuous Drain Current 200 mA | ||
Maximum Drain Source Voltage 600 V | ||
Series VN2460 | ||
Package Type TO-243AA | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 25 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 1.5V | ||
Maximum Power Dissipation 1.6 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Maximum Operating Temperature +150 °C | ||
Length 4.6mm | ||
Width 2.6mm | ||
Number of Elements per Chip 1 | ||
Height 1.6mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.5V | ||
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain