Vishay P-Channel MOSFET, 690 mA, 100 V, 3-Pin SOT-223 IRFL9110TRPBF
- RS Stock No.:
- 177-7606
- Mfr. Part No.:
- IRFL9110TRPBF
- Brand:
- Vishay
Subtotal (1 reel of 2500 units)*
£745.00
(exc. VAT)
£895.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 09 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 + | £0.298 | £745.00 |
*price indicative
- RS Stock No.:
- 177-7606
- Mfr. Part No.:
- IRFL9110TRPBF
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 690 mA | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | SOT-223 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.2 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 3.1 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 3.7mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 8.7 nC @ 10 V | |
| Length | 6.7mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.8mm | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 690 mA | ||
Maximum Drain Source Voltage 100 V | ||
Package Type SOT-223 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.2 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 3.1 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 3.7mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 8.7 nC @ 10 V | ||
Length 6.7mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1.8mm | ||
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Dynamic dV/dt rating
Repetitive avalanche rated
Fast switching
Ease of paralleling
Repetitive avalanche rated
Fast switching
Ease of paralleling
MOSFET Transistors, Vishay Semiconductor
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