Vishay P-Channel MOSFET, 1.9 A, 200 V, 3-Pin DPAK IRFR9210TRPBF
- RS Stock No.:
- 177-7564
- Mfr. Part No.:
- IRFR9210TRPBF
- Brand:
- Vishay
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 177-7564
- Mfr. Part No.:
- IRFR9210TRPBF
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 1.9 A | |
| Maximum Drain Source Voltage | 200 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 25 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 6.73mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Width | 6.22mm | |
| Typical Gate Charge @ Vgs | 8.9 nC @ 10 V | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.38mm | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 1.9 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 25 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 6.73mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Width 6.22mm | ||
Typical Gate Charge @ Vgs 8.9 nC @ 10 V | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 2.38mm | ||
The Vishay power MOSFETs technology is the key to advanced line of power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness.
Dynamic dV/dt rating
Repetitive avalanche rated
Fast switching
Repetitive avalanche rated
Fast switching