ROHM RQ3E150GN N-Channel MOSFET, 39 A, 30 V, 8-Pin HSMT RQ3E150GNTB
- RS Stock No.:
- 177-6730
- Mfr. Part No.:
- RQ3E150GNTB
- Brand:
- ROHM
Stock information currently inaccessible
- RS Stock No.:
- 177-6730
- Mfr. Part No.:
- RQ3E150GNTB
- Brand:
- ROHM
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 39 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | RQ3E150GN | |
| Package Type | HSMT | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 6.1 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 17 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Number of Elements per Chip | 1 | |
| Width | 3.1mm | |
| Maximum Operating Temperature | +150 °C | |
| Length | 3.3mm | |
| Typical Gate Charge @ Vgs | 15.3 nC @ 10 V | |
| Height | 0.9mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 39 A | ||
Maximum Drain Source Voltage 30 V | ||
Series RQ3E150GN | ||
Package Type HSMT | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 6.1 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 17 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Number of Elements per Chip 1 | ||
Width 3.1mm | ||
Maximum Operating Temperature +150 °C | ||
Length 3.3mm | ||
Typical Gate Charge @ Vgs 15.3 nC @ 10 V | ||
Height 0.9mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
RoHS Status: Not Applicable
- COO (Country of Origin):
- JP
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Low on - resistance.
High Power Package (HSMT8).
Pb-free lead plating
Halogen Free
High Power Package (HSMT8).
Pb-free lead plating
Halogen Free