ROHM RD3S100CN N-Channel MOSFET, 10 A, 190 V, 3-Pin DPAK RD3S100CNTL1

Unavailable
RS will no longer stock this product.
RS Stock No.:
177-6712
Mfr. Part No.:
RD3S100CNTL1
Brand:
ROHM
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Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

190 V

Package Type

DPAK (TO-252)

Series

RD3S100CN

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

182 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

85 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

6.4mm

Length

6.8mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

52 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

2.4mm

Forward Diode Voltage

1.5V

Minimum Operating Temperature

-55 °C

RoHS Status: Not Applicable

COO (Country of Origin):
TH
RD3S100CN is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.

Low on-resistance
Fast switching speed
Drive circuits can be simple
Parallel use is easy
Pb-free plating