ROHM R6511ENJ N-Channel MOSFET, 11 A, 650 V, 3-Pin D2PAK R6511ENJTL
- RS Stock No.:
- 177-6367
- Mfr. Part No.:
- R6511ENJTL
- Brand:
- ROHM
Stock information currently inaccessible
- RS Stock No.:
- 177-6367
- Mfr. Part No.:
- R6511ENJTL
- Brand:
- ROHM
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 11 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-263S | |
| Series | R6511ENJ | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 400 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 124 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Number of Elements per Chip | 1 | |
| Width | 9.2mm | |
| Typical Gate Charge @ Vgs | 32 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 10.4mm | |
| Height | 4.7mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.5V | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 11 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-263S | ||
Series R6511ENJ | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 400 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 124 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Number of Elements per Chip 1 | ||
Width 9.2mm | ||
Typical Gate Charge @ Vgs 32 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Length 10.4mm | ||
Height 4.7mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.5V | ||
RoHS Status: Not Applicable
- COO (Country of Origin):
- JP
R6511ENJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
Low on-resistance
Fast switching speed
Parallel use is easy
Pb-free plating
Fast switching speed
Parallel use is easy
Pb-free plating