ROHM R6011KND3 N-Channel MOSFET, 11 A, 600 V, 3-Pin DPAK R6011KND3TL1

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

600 V

Series

R6011KND3

Package Type

TO-252

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

390 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

124 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

22 nC @ 10 V

Length

6.8mm

Number of Elements per Chip

1

Width

6.4mm

Forward Diode Voltage

1.5V

Minimum Operating Temperature

-55 °C

Height

2.4mm