ROHM R6520KNX1 N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220AB R6520KNX1C10
- RS Stock No.:
- 177-6119
- Mfr. Part No.:
- R6520KNX1C10
- Brand:
- ROHM
Stock information currently inaccessible
- RS Stock No.:
- 177-6119
- Mfr. Part No.:
- R6520KNX1C10
- Brand:
- ROHM
Specifications
Technical Reference
Legislation and Compliance
Product Details
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Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 20 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | R6520KNX1 | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 200 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 220 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Length | 10.1mm | |
| Width | 4.7mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 40 nC @ 10 V | |
| Forward Diode Voltage | 1.5V | |
| Height | 16.3mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 650 V | ||
Series R6520KNX1 | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 200 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 220 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Length 10.1mm | ||
Width 4.7mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 40 nC @ 10 V | ||
Forward Diode Voltage 1.5V | ||
Height 16.3mm | ||
Minimum Operating Temperature -55 °C | ||
RoHS Status: Not Applicable
- COO (Country of Origin):
- TH
R6520KNX1 is Low on-resistance and ultra fast switching speed Power MOSFET.
Low on-resistance.
Ultra fast switching speed.
Parallel use is easy.
Pb-free lead plating
Ultra fast switching speed.
Parallel use is easy.
Pb-free lead plating