onsemi N-Channel MOSFET, 203 A, 80 V, 5-Pin DFN NTMFS6H800NT1G

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Packaging Options:
RS Stock No.:
172-8974
Mfr. Part No.:
NTMFS6H800NT1G
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

203 A

Maximum Drain Source Voltage

80 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

3.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

85 nC @ 10 V

Width

5.1mm

Length

6.1mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

1.1mm

Minimum Operating Temperature

-55 °C

ON Semiconductor MOSFET


The ON Semiconductor DFN5 surface mount N-channel MOSFET is a new age product with a drain-source voltage of 80V and a maximum gate-source voltage of 20V. It has drain-source resistance of 2.1mohm at a gate-source voltage of 10V. It has continuous drain current of 203A and maximum power dissipation of 200W. The minimum and a maximum driving voltage for this transistor are 6V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Compact design
• Lead (Pb) free
• Low QG and capacitance
• Low QG and capacitance to minimize driver losses
• Low RDS (on) to minimize conduction losses
• Minimize conduction losses
• Minimize driver losses
• Operating temperature ranges between -55°C and 175°C
• Small footprint (5x6 mm)

Applications


• 48V systems
• DC/DC converter
• Load switch
• Motor control
• Power switches (high side driver, low side driver, H-bridges etc.)
• Switching power supplies
• Synchronous rectifier

Certifications


• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007

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