Specifications

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Product Details

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Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	12 A
	Maximum Drain Source Voltage	650 V
	Package Type	TO-220F
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	250 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4.5V
	Minimum Gate Threshold Voltage	2.5V
	Maximum Power Dissipation	31 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	±30 V
	Length	10.3mm
	Maximum Operating Temperature	+150 °C
	Number of Elements per Chip	1
	Width	4.6mm
	Typical Gate Charge @ Vgs	24 nC @ 10 V
	Forward Diode Voltage	1.2V
	Minimum Operating Temperature	-55 °C
	Height	15.7mm

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 12 A
	Maximum Drain Source Voltage 650 V
	Package Type TO-220F
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 250 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4.5V
	Minimum Gate Threshold Voltage 2.5V
	Maximum Power Dissipation 31 W
	Transistor Configuration Single
	Maximum Gate Source Voltage ±30 V
	Length 10.3mm
	Maximum Operating Temperature +150 °C
	Number of Elements per Chip 1
	Width 4.6mm
	Typical Gate Charge @ Vgs 24 nC @ 10 V
	Forward Diode Voltage 1.2V
	Minimum Operating Temperature -55 °C
	Height 15.7mm

COO (Country of Origin):: CN

SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.

700 V @ TJ = 150 oC
Higher system reliability at low temperature operation
Ultra Low Gate Charge (Typ. Qg = 30 nC)
Lower switching loss
Low Effective Output Capacitance (Typ. Coss(eff.) = 277 pF)
Lower switching loss
Optimized Capacitance
Lower peak Vds and lower Vgs oscillation
Internal Gate resistance: 7.0 ohm
Lower peak Vds and lower Vgs oscillation
Typ. RDS(on) = 170 mΩ
Wave soldering guarantee
Computing
Consumer
Industrial
Notebook / Desktop computer / Game console
Telecom / Server

N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-220F onsemi FCPF250N65S3L1