onsemi N-Channel MOSFET, 6 A, 800 V, 3-Pin IPAK FCU850N80Z

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Packaging Options:
RS Stock No.:
172-4600
Mfr. Part No.:
FCU850N80Z
Brand:
ON Semiconductor
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Brand

ON Semiconductor

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

800 V

Package Type

IPAK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

850 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V dc, ±30 V ac

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

22 nC @ 10 V

Length

6.8mm

Width

2.5mm

Number of Elements per Chip

1

Height

7.57mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

COO (Country of Origin):
CN
SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.

Typ. RDS(on) = 710 mΩ(Typ.)
Ultra Low Gate Charge (Typ. Qg = 22 nC)
Low Eoss (Typ. 2.3 uJ @ 400V)
Low Effective Output Capacitance (Typ. Coss(eff.) = 106 pF)
ESD Improved Capability