onsemi N-Channel MOSFET, 6 A, 800 V, 3-Pin IPAK FCU850N80Z
- RS Stock No.:
- 172-3430
- Mfr. Part No.:
- FCU850N80Z
- Brand:
- ON Semiconductor
Stock information currently inaccessible
- RS Stock No.:
- 172-3430
- Mfr. Part No.:
- FCU850N80Z
- Brand:
- ON Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ON Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 6 A | |
| Maximum Drain Source Voltage | 800 V | |
| Package Type | IPAK | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 850 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 75 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V dc, ±30 V ac | |
| Width | 2.5mm | |
| Number of Elements per Chip | 1 | |
| Length | 6.8mm | |
| Typical Gate Charge @ Vgs | 22 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Height | 7.57mm | |
| Select all | ||
|---|---|---|
Brand ON Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 6 A | ||
Maximum Drain Source Voltage 800 V | ||
Package Type IPAK | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 850 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 75 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V dc, ±30 V ac | ||
Width 2.5mm | ||
Number of Elements per Chip 1 | ||
Length 6.8mm | ||
Typical Gate Charge @ Vgs 22 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
Height 7.57mm | ||
- COO (Country of Origin):
- CN
SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.
Typ. RDS(on) = 710 mΩ(Typ.)
Ultra Low Gate Charge (Typ. Qg = 22 nC)
Low Eoss (Typ. 2.3 uJ @ 400V)
Low Effective Output Capacitance (Typ. Coss(eff.) = 106 pF)
ESD Improved Capability
Ultra Low Gate Charge (Typ. Qg = 22 nC)
Low Eoss (Typ. 2.3 uJ @ 400V)
Low Effective Output Capacitance (Typ. Coss(eff.) = 106 pF)
ESD Improved Capability