onsemi NVMFD5C672NL Dual N-Channel MOSFET, 49 A, 60 V, 8-Pin DFN NVMFD5C672NLWFT1G
- RS Stock No.:
- 172-3408P
- Mfr. Part No.:
- NVMFD5C672NLWFT1G
- Brand:
- onsemi
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£80.30
(exc. VAT)
£96.40
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 950 unit(s), ready to ship
Units | Per unit |
|---|---|
| 100 - 225 | £0.803 |
| 250 + | £0.696 |
*price indicative
- RS Stock No.:
- 172-3408P
- Mfr. Part No.:
- NVMFD5C672NLWFT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 49 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | NVMFD5C672NL | |
| Package Type | DFN | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 16.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 45 W | |
| Maximum Gate Source Voltage | ±20 V | |
| Maximum Operating Temperature | +175 °C | |
| Width | 5.1mm | |
| Number of Elements per Chip | 2 | |
| Length | 6.1mm | |
| Typical Gate Charge @ Vgs | 12.3 nC @ 10 V | |
| Forward Diode Voltage | 1.2V | |
| Height | 1.05mm | |
| Minimum Operating Temperature | -55 °C | |
| Automotive Standard | AEC-Q101 | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 49 A | ||
Maximum Drain Source Voltage 60 V | ||
Series NVMFD5C672NL | ||
Package Type DFN | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 16.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 45 W | ||
Maximum Gate Source Voltage ±20 V | ||
Maximum Operating Temperature +175 °C | ||
Width 5.1mm | ||
Number of Elements per Chip 2 | ||
Length 6.1mm | ||
Typical Gate Charge @ Vgs 12.3 nC @ 10 V | ||
Forward Diode Voltage 1.2V | ||
Height 1.05mm | ||
Minimum Operating Temperature -55 °C | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (5x6 mm)
Compact Design
Low rDS(on)
Minimize Conduction Loss
Low QG and Capacitance
Minimize Driver Losses
NVMFD5C446NLWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable
Applications
Solenoid driver
Low side / high side driver
Automotive engine controllers
Antilock braking systems
Compact Design
Low rDS(on)
Minimize Conduction Loss
Low QG and Capacitance
Minimize Driver Losses
NVMFD5C446NLWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable
Applications
Solenoid driver
Low side / high side driver
Automotive engine controllers
Antilock braking systems