SiC MOSFET, 2 + Tab-Pin TO-220-2L onsemi FFSP1265A

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Unavailable
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RS Stock No.:
172-3396
Mfr. Part No.:
FFSP1265A
Brand:
ON Semiconductor
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Brand

ON Semiconductor

Package Type

TO-220-2L

Mounting Type

Through Hole

Pin Count

2 + Tab

Maximum Power Dissipation

115 W

Transistor Configuration

Single

Number of Elements per Chip

1

Length

10.67mm

Width

4.8mm

Maximum Operating Temperature

+175 °C

Transistor Material

SiC

Forward Diode Voltage

2.4V

Height

16.51mm

Minimum Operating Temperature

-55 °C

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Max Junction Temperature 175 °C
High Surge Current Capacity
Positive Temperature Coefficient
No Reverse Recovery / No Forward Recovery
Applications
PFC
Industrial Power
Solar
EV Charger
UPS
Welding