onsemi NCP81080 Dual N-Channel MOSFET, 8-Pin SOIC NCP81080DR2G

Stock information currently inaccessible
Packaging Options:
RS Stock No.:
172-3381
Mfr. Part No.:
NCP81080DR2G
Brand:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Channel Type

N

Package Type

SOIC

Series

NCP81080

Mounting Type

Surface Mount

Pin Count

8

Maximum Gate Threshold Voltage

5.4V

Minimum Gate Threshold Voltage

3.4V

Length

5mm

Width

4mm

Number of Elements per Chip

2

Maximum Operating Temperature

+170 °C

Minimum Operating Temperature

-40 °C

Height

1.5mm

The NCP81080 is a high performance dual mosfet (high side and low side) gate-drive IC designed for driving MOSFETs operating up to 180 V. The NCP81080 integrates a driver IC and a bootstrap diode and offers 0.5A source/0.8A sink driving capability. Anti-cross conduction circuit is integrated to prevent shoot through issues. The high side and low side drivers are independently controlled.

Drives two N-Channel MOSFETs in High & Low Side
Integrated Bootstrap Diode for High Side Gate Drive
Bootstrap Supply Voltage Range up to 180V
0.5A Source, 0.8A Sink Output Current Capability
Drives 1nF Load with Typical Rise/Fall Times of 19ns/17 ns
Wide Supply Voltage Range 5.5V to 20V
2 ns Delay Matching (Typical)
Under-Voltage Lockout (UVLO) Protection for Drive Voltage
Operating Junction Temperature Range of -40°C to 140°C

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy