onsemi NCP81080 Dual N-Channel MOSFET, 8-Pin SOIC NCP81080DR2G

View all MOSFETs
Unavailable
RS will no longer stock this product.
Packaging Options:
RS Stock No.:
172-3381
Mfr. Part No.:
NCP81080DR2G
Brand:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Channel Type

N

Series

NCP81080

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Gate Threshold Voltage

5.4V

Minimum Gate Threshold Voltage

3.4V

Number of Elements per Chip

2

Maximum Operating Temperature

+170 °C

Width

4mm

Length

5mm

Minimum Operating Temperature

-40 °C

Height

1.5mm

The NCP81080 is a high performance dual mosfet (high side and low side) gate-drive IC designed for driving MOSFETs operating up to 180 V. The NCP81080 integrates a driver IC and a bootstrap diode and offers 0.5A source/0.8A sink driving capability. Anti-cross conduction circuit is integrated to prevent shoot through issues. The high side and low side drivers are independently controlled.

Drives two N-Channel MOSFETs in High & Low Side
Integrated Bootstrap Diode for High Side Gate Drive
Bootstrap Supply Voltage Range up to 180V
0.5A Source, 0.8A Sink Output Current Capability
Drives 1nF Load with Typical Rise/Fall Times of 19ns/17 ns
Wide Supply Voltage Range 5.5V to 20V
2 ns Delay Matching (Typical)
Under-Voltage Lockout (UVLO) Protection for Drive Voltage
Operating Junction Temperature Range of -40°C to 140°C