onsemi NVMFS6H818N N-Channel MOSFET, 123 A, 80 V, 5-Pin DFN NVMFS6H818NWFT1G

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Packaging Options:
RS Stock No.:
172-3349
Mfr. Part No.:
NVMFS6H818NWFT1G
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

123 A

Maximum Drain Source Voltage

80 V

Package Type

DFN

Series

NVMFS6H818N

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

3.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

136 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Typical Gate Charge @ Vgs

46 nC @ 10 V

Length

6.1mm

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Width

5.1mm

Minimum Operating Temperature

-55 °C

Height

1.05mm

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.

Small Footprint (5x6 mm)
Compact Design
Low rDS(on)
Minimize Conduction Loss
Low QG and Capacitance
Minimize Driver Losses
NVMFD5C446NLWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable

Applications
Solenoid driver
Low side / high side driver
Automotive engine controllers
Antilock braking systems