The NCP81080 is a high performance dual mosfet (high side and low side) gate-drive IC designed for driving MOSFETs operating up to 180 V. The NCP81080 integrates a driver IC and a bootstrap diode and offers 0.5A source/0.8A sink driving capability. Anti-cross conduction circuit is integrated to prevent shoot through issues. The high side and low side drivers are independently controlled.
Drives two N-Channel MOSFETs in High & Low Side Integrated Bootstrap Diode for High Side Gate Drive Bootstrap Supply Voltage Range up to 180V 0.5A Source, 0.8A Sink Output Current Capability Drives 1nF Load with Typical Rise/Fall Times of 19ns/17 ns Wide Supply Voltage Range 5.5V to 20V 2 ns Delay Matching (Typical) Under-Voltage Lockout (UVLO) Protection for Drive Voltage Operating Junction Temperature Range of -40°C to 140°C
The NCP81080 is a high performance dual mosfet (high side and low side) gate-drive IC designed for driving MOSFETs operating up to 180 V. The NCP81080 integrates a driver IC and a bootstrap diode and offers 0.5A source/0.8A sink driving capability. Anti-cross conduction circuit is integrated to prevent shoot through issues. The high side and low side drivers are independently controlled.
Drives two N-Channel MOSFETs in High & Low Side Integrated Bootstrap Diode for High Side Gate Drive Bootstrap Supply Voltage Range up to 180V 0.5A Source, 0.8A Sink Output Current Capability Drives 1nF Load with Typical Rise/Fall Times of 19ns/17 ns Wide Supply Voltage Range 5.5V to 20V 2 ns Delay Matching (Typical) Under-Voltage Lockout (UVLO) Protection for Drive Voltage Operating Junction Temperature Range of -40°C to 140°C
