ROHM N-Channel MOSFET, 9 A, 600 V, 3-Pin TO-220FM R6009ENX

Stock information currently inaccessible
RS Stock No.:
172-0550
Mfr. Part No.:
R6009ENX
Brand:
ROHM
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Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220FM

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

48 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

23 nC @ 10 V

Length

10.3mm

Width

4.8mm

Number of Elements per Chip

1

Height

15.4mm

Forward Diode Voltage

1.5V

Minimum Operating Temperature

-55 °C

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Low on-resistance.
Fast switching speed.
Gate-source voltage (VGSS) guaranteed to be ±20V.
Drive circuits can be simple.
Parallel use is easy.
Pb-free lead plating

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