ROHM RJ1G08CGN N-Channel MOSFET, 80 A, 40 V, 3-Pin D2PAK RJ1G08CGNTLL
- RS Stock No.:
- 172-0517
- Mfr. Part No.:
- RJ1G08CGNTLL
- Brand:
- ROHM
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
£7.45
(exc. VAT)
£8.94
(inc. VAT)
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | £0.745 | £7.45 |
| 100 - 240 | £0.655 | £6.55 |
| 250 - 490 | £0.639 | £6.39 |
| 500 - 740 | £0.62 | £6.20 |
| 750 + | £0.605 | £6.05 |
*price indicative
- RS Stock No.:
- 172-0517
- Mfr. Part No.:
- RJ1G08CGNTLL
- Brand:
- ROHM
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 80 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | TO-263AB | |
| Series | RJ1G08CGN | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 6.7 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 78 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Typical Gate Charge @ Vgs | 31.1 nC @ 10 V | |
| Width | 9.2mm | |
| Number of Elements per Chip | 1 | |
| Length | 10.4mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.7mm | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type TO-263AB | ||
Series RJ1G08CGN | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 6.7 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 78 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Typical Gate Charge @ Vgs 31.1 nC @ 10 V | ||
Width 9.2mm | ||
Number of Elements per Chip 1 | ||
Length 10.4mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 4.7mm | ||
Forward Diode Voltage 1.2V | ||
- COO (Country of Origin):
- JP
RJ1G08CGN is a power MOSFET with low-on resistance and High power small mold package (LPTL), suitable for switching.
Low on - resistance.
High Power Small Mold Package (HUML2020L8).
Pb-free lead plating
Halogen Free
High Power Small Mold Package (HUML2020L8).
Pb-free lead plating
Halogen Free