ROHM N-Channel MOSFET, 8 A, 800 V, 3-Pin TO-220FM R8008ANX
- RS Stock No.:
- 172-0502
- Mfr. Part No.:
- R8008ANX
- Brand:
- ROHM
Bulk discount available
Subtotal (1 pack of 5 units)*
£16.64
(exc. VAT)
£19.97
(inc. VAT)
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £3.328 | £16.64 |
| 50 - 95 | £2.996 | £14.98 |
| 100 - 195 | £2.72 | £13.60 |
| 200 - 395 | £2.494 | £12.47 |
| 400 + | £2.408 | £12.04 |
*price indicative
- RS Stock No.:
- 172-0502
- Mfr. Part No.:
- R8008ANX
- Brand:
- ROHM
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 8 A | |
| Maximum Drain Source Voltage | 800 V | |
| Package Type | TO-220FM | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.54 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 66 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Width | 4.8mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 39 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Length | 10.3mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 15.4mm | |
| Forward Diode Voltage | 1.5V | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 8 A | ||
Maximum Drain Source Voltage 800 V | ||
Package Type TO-220FM | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.54 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 66 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Width 4.8mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 39 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Length 10.3mm | ||
Minimum Operating Temperature -55 °C | ||
Height 15.4mm | ||
Forward Diode Voltage 1.5V | ||
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
10Ｖ-drive type
Nch Power MOSFET
Fast Switching Speed
Drive circuits can be simple
Parallel use is easy
Pb Free
Nch Power MOSFET
Fast Switching Speed
Drive circuits can be simple
Parallel use is easy
Pb Free