ROHM RD3H160SP P-Channel MOSFET, 16 A, 45 V, 3-Pin DPAK RD3H160SPTL1
- RS Stock No.:
- 172-0477
- Mfr. Part No.:
- RD3H160SPTL1
- Brand:
- ROHM
Bulk discount available
Subtotal (1 pack of 25 units)*
£24.725
(exc. VAT)
£29.675
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 225 | £0.989 | £24.73 |
| 250 - 475 | £0.89 | £22.25 |
| 500 - 975 | £0.81 | £20.25 |
| 1000 - 1975 | £0.695 | £17.38 |
| 2000 + | £0.681 | £17.03 |
*price indicative
- RS Stock No.:
- 172-0477
- Mfr. Part No.:
- RD3H160SPTL1
- Brand:
- ROHM
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 16 A | |
| Maximum Drain Source Voltage | 45 V | |
| Package Type | DPAK (TO-252) | |
| Series | RD3H160SP | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 70 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 20 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 16 nC @ 5 V | |
| Width | 6.4mm | |
| Length | 6.8mm | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.3mm | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type P | ||
Maximum Continuous Drain Current 16 A | ||
Maximum Drain Source Voltage 45 V | ||
Package Type DPAK (TO-252) | ||
Series RD3H160SP | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 70 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 20 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 16 nC @ 5 V | ||
Width 6.4mm | ||
Length 6.8mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 2.3mm | ||
Forward Diode Voltage 1.2V | ||
RD3H160SP is a Power MOSFET with Low on - resistance., suitable for Switching.
Low on-resistance.
Fast switching speed.
Drive circuits can be simple.
Parallel use is easy.
Pb-free plating
Fast switching speed.
Drive circuits can be simple.
Parallel use is easy.
Pb-free plating