ROHM RD3P175SN N-Channel MOSFET, 17.5 A, 100 V, 2 + Tab-Pin DPAK RD3P175SNTL1
- RS Stock No.:
- 172-0466
- Mfr. Part No.:
- RD3P175SNTL1
- Brand:
- ROHM
Bulk discount available
Subtotal (1 pack of 25 units)*
£22.95
(exc. VAT)
£27.55
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 225 | £0.918 | £22.95 |
| 250 - 475 | £0.826 | £20.65 |
| 500 - 975 | £0.75 | £18.75 |
| 1000 - 1975 | £0.644 | £16.10 |
| 2000 + | £0.63 | £15.75 |
*price indicative
- RS Stock No.:
- 172-0466
- Mfr. Part No.:
- RD3P175SNTL1
- Brand:
- ROHM
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 17.5 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | TO-252 | |
| Series | RD3P175SN | |
| Mounting Type | Surface Mount | |
| Pin Count | 2 + Tab | |
| Maximum Drain Source Resistance | 119 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 20 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Width | 6.4mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 24 nC @ 10 V | |
| Length | 6.8mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 2.3mm | |
| Forward Diode Voltage | 1.5V | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 17.5 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-252 | ||
Series RD3P175SN | ||
Mounting Type Surface Mount | ||
Pin Count 2 + Tab | ||
Maximum Drain Source Resistance 119 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 20 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Width 6.4mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 24 nC @ 10 V | ||
Length 6.8mm | ||
Maximum Operating Temperature +150 °C | ||
Height 2.3mm | ||
Forward Diode Voltage 1.5V | ||
Minimum Operating Temperature -55 °C | ||
RD3P175SN is a Power MOSFET with Low on - resistance., suitable for Switching.
Low on-resistance.
Fast switching speed.
Drive circuits can be simple.
Parallel use is easy.
Pb-free plating
Fast switching speed.
Drive circuits can be simple.
Parallel use is easy.
Pb-free plating