ROHM RQ5A040ZP P-Channel MOSFET, 4 A, 12 V, 3-Pin TSMT-3 RQ5A040ZPTL
- RS Stock No.:
- 171-9919
- Mfr. Part No.:
- RQ5A040ZPTL
- Brand:
- ROHM
Stock information currently inaccessible
- RS Stock No.:
- 171-9919
- Mfr. Part No.:
- RQ5A040ZPTL
- Brand:
- ROHM
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 4 A | |
| Maximum Drain Source Voltage | 12 V | |
| Series | RQ5A040ZP | |
| Package Type | TSMT-3 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 110 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 0.3V | |
| Maximum Power Dissipation | 1 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±10 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 30 nC @ 4.5 | |
| Length | 3mm | |
| Width | 1.8mm | |
| Height | 0.95mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type P | ||
Maximum Continuous Drain Current 4 A | ||
Maximum Drain Source Voltage 12 V | ||
Series RQ5A040ZP | ||
Package Type TSMT-3 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 110 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 0.3V | ||
Maximum Power Dissipation 1 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±10 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 30 nC @ 4.5 | ||
Length 3mm | ||
Width 1.8mm | ||
Height 0.95mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- JP
RQ5A040ZP is a Small Signal MOSFET featuring low-on resistance and Built-in G-S Protection Diode. It is suitable for switching.
Low on -resistance.
Built-in G-S Protection Diode.
Small Surface Mount Package(TSMT3).
Pb-free lead plating
Built-in G-S Protection Diode.
Small Surface Mount Package(TSMT3).
Pb-free lead plating