onsemi NVTFS5C454NL N-Channel MOSFET, 85 A, 40 V, 8-Pin WDFN NVTFS5C454NLWFTAG
- RS Stock No.:
- 171-8334
- Mfr. Part No.:
- NVTFS5C454NLWFTAG
- Brand:
- ON Semiconductor
Stock information currently inaccessible
- RS Stock No.:
- 171-8334
- Mfr. Part No.:
- NVTFS5C454NLWFTAG
- Brand:
- ON Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ON Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 85 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | WDFN | |
| Series | NVTFS5C454NL | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 6.9 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 55 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Number of Elements per Chip | 1 | |
| Width | 3.15mm | |
| Length | 3.15mm | |
| Typical Gate Charge @ Vgs | 8.2 nC @ 4.5 V | |
| Maximum Operating Temperature | +175 °C | |
| Automotive Standard | AEC-Q101 | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Height | 0.75mm | |
| Select all | ||
|---|---|---|
Brand ON Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 85 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type WDFN | ||
Series NVTFS5C454NL | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 6.9 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 55 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Number of Elements per Chip 1 | ||
Width 3.15mm | ||
Length 3.15mm | ||
Typical Gate Charge @ Vgs 8.2 nC @ 4.5 V | ||
Maximum Operating Temperature +175 °C | ||
Automotive Standard AEC-Q101 | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
Height 0.75mm | ||
Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. PPAP capable suitable for automotive applications.
Small Footprint (3x3 mm)
Compact Design
Low on-resistance
minimizes conduction losses
Low gate charge
minimizes switching losses
u8FL package
very small footprint enabling smaller PCBs and modules
suitable for automotive applications
Pb−Free
Reverser Battery protection
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
Switching power supplies
Solenoid Driver – ABS, Fuel injection
Motor Control – EPS, Wipers, Fans, Seats, etc.
Load Switch – ECU, Chassis, Body
Compact Design
Low on-resistance
minimizes conduction losses
Low gate charge
minimizes switching losses
u8FL package
very small footprint enabling smaller PCBs and modules
suitable for automotive applications
Pb−Free
Reverser Battery protection
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
Switching power supplies
Solenoid Driver – ABS, Fuel injection
Motor Control – EPS, Wipers, Fans, Seats, etc.
Load Switch – ECU, Chassis, Body