Taiwan Semi N-Channel MOSFET, 4.5 A, 60 V, 8-Pin SOP TSM4946DCS RLG
- RS Stock No.:
- 171-3717
- Mfr. Part No.:
- TSM4946DCS RLG
- Brand:
- Taiwan Semiconductor
Stock information currently inaccessible
- RS Stock No.:
- 171-3717
- Mfr. Part No.:
- TSM4946DCS RLG
- Brand:
- Taiwan Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Taiwan Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 4.5 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOP | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 75 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2.4 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Length | 5mm | |
| Typical Gate Charge @ Vgs | 19 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Width | 4mm | |
| Height | 1.5mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
Brand Taiwan Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 4.5 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOP | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 75 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.4 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Length 5mm | ||
Typical Gate Charge @ Vgs 19 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Width 4mm | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
The Taiwan Semiconductor 60V, 4. 5A, 8 pin, dual N-channel power MOSFET has single transistor configuration and enhancement channel mode. It is generally used in high-Side DC/DC Conversion, notebook, sever applications.
Advance trench process technology
High density cell design for ultra low on-resistance
RoHS compliant
Operating temperature ranges between -55 °C to +150 °C
2.4W max. power dissipation
Gate threshold voltage ranges between 1V-3V
High density cell design for ultra low on-resistance
RoHS compliant
Operating temperature ranges between -55 °C to +150 °C
2.4W max. power dissipation
Gate threshold voltage ranges between 1V-3V