Taiwan Semi N-Channel MOSFET, 6 A, 600 V, 3-Pin DPAK TSM6N60CP ROG
- RS Stock No.:
- 171-3691
- Mfr. Part No.:
- TSM6N60CP ROG
- Brand:
- Taiwan Semiconductor
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 171-3691
- Mfr. Part No.:
- TSM6N60CP ROG
- Brand:
- Taiwan Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Taiwan Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 6 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.25 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 89 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Typical Gate Charge @ Vgs | 20.7 nC @ 10 V | |
| Length | 6.5mm | |
| Number of Elements per Chip | 1 | |
| Width | 5.8mm | |
| Maximum Operating Temperature | +150 °C | |
| Forward Diode Voltage | 1.5V | |
| Height | 2.3mm | |
| Select all | ||
|---|---|---|
Brand Taiwan Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 6 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.25 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 89 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Typical Gate Charge @ Vgs 20.7 nC @ 10 V | ||
Length 6.5mm | ||
Number of Elements per Chip 1 | ||
Width 5.8mm | ||
Maximum Operating Temperature +150 °C | ||
Forward Diode Voltage 1.5V | ||
Height 2.3mm | ||
The Taiwan Semiconductor 600V, 6A, 1. 25Ω, 3 pin, N-channel power MOSFET has single transistor configuration and enhancement channel mode.
High power and current handing capability.
Low RDS(ON) 1.25Ω (Max.)
Low gate charge typical @ 20.7nC (Typ.)
RoHS compliant
Operating temperature ranges between -55 °C to +150 °C
89W max. power dissipation
Gate threshold voltage ranges between 2V-4V
Low RDS(ON) 1.25Ω (Max.)
Low gate charge typical @ 20.7nC (Typ.)
RoHS compliant
Operating temperature ranges between -55 °C to +150 °C
89W max. power dissipation
Gate threshold voltage ranges between 2V-4V