Taiwan Semi N-Channel MOSFET, 7 A, 900 V, 3-Pin TO-220 TSM7N90CZ C0G
- RS Stock No.:
- 171-3673
- Mfr. Part No.:
- TSM7N90CZ C0G
- Brand:
- Taiwan Semiconductor
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 171-3673
- Mfr. Part No.:
- TSM7N90CZ C0G
- Brand:
- Taiwan Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Taiwan Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 7 A | |
| Maximum Drain Source Voltage | 900 V | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.9 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 250 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 4.19mm | |
| Typical Gate Charge @ Vgs | 49 nC @ 10 V | |
| Length | 10mm | |
| Number of Elements per Chip | 1 | |
| Height | 14.25mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.4V | |
| Select all | ||
|---|---|---|
Brand Taiwan Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 7 A | ||
Maximum Drain Source Voltage 900 V | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.9 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 250 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Maximum Operating Temperature +150 °C | ||
Width 4.19mm | ||
Typical Gate Charge @ Vgs 49 nC @ 10 V | ||
Length 10mm | ||
Number of Elements per Chip 1 | ||
Height 14.25mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.4V | ||
The Taiwan Semiconductor 900V, 7A, 1. 9Ω, 3 pin, N-channel power MOSFET has single transistor configuration and enhancement channel mode. It is generally used in power Supply and lighting applications.
Low RDS(on) 1.9Ω (Max.)
Low gate charge typical @49nC (Typ.)
Improve dV/dt capability
Pb-free plating
Compliant to RoHS Directive 2011/65/EU and in accordance to WEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
Operating temperature ranges between -55 °C to +150 °C
250W max. power dissipation
Gate threshold voltage ranges between 2V-4V
Low gate charge typical @49nC (Typ.)
Improve dV/dt capability
Pb-free plating
Compliant to RoHS Directive 2011/65/EU and in accordance to WEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
Operating temperature ranges between -55 °C to +150 °C
250W max. power dissipation
Gate threshold voltage ranges between 2V-4V