Taiwan Semi N-Channel MOSFET, 13 A, 600 V, 3-Pin ITO-220S TSM60NB260CI C0G
- RS Stock No.:
- 171-3632
- Mfr. Part No.:
- TSM60NB260CI C0G
- Brand:
- Taiwan Semiconductor
Stock information currently inaccessible
- RS Stock No.:
- 171-3632
- Mfr. Part No.:
- TSM60NB260CI C0G
- Brand:
- Taiwan Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Taiwan Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 13 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | ITO-220S | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 260 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 32.1 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Width | 4.6mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 30 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 10mm | |
| Height | 15mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.4V | |
| Select all | ||
|---|---|---|
Brand Taiwan Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 13 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type ITO-220S | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 260 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 32.1 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Width 4.6mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 30 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Length 10mm | ||
Height 15mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.4V | ||
The Taiwan Semiconductor 600V, 13A, 0. 26Ω, 3 pin, N-channel power MOSFET has single transistor configuration and enhancement channel mode. It is generally used in power Supply and AC/DC LED lighting applications.
Super-Junction technology
High performance due to small figure-of-merit
High ruggedness performance
High commutation performance
100% UIL tested
Pb-free plating
Compliant to RoHS Directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
Operating temperature ranges between -55 °C to +150 °C
32.1W max. power dissipation
Gate threshold voltage ranges between 2V-4V
High performance due to small figure-of-merit
High ruggedness performance
High commutation performance
100% UIL tested
Pb-free plating
Compliant to RoHS Directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
Operating temperature ranges between -55 °C to +150 °C
32.1W max. power dissipation
Gate threshold voltage ranges between 2V-4V