Taiwan Semi N-Channel MOSFET, 1 A, 600 V, 3-Pin IPAK TSM1NB60CH C5G
- RS Stock No.:
- 171-3613
- Mfr. Part No.:
- TSM1NB60CH C5G
- Brand:
- Taiwan Semiconductor
Stock information currently inaccessible
- RS Stock No.:
- 171-3613
- Mfr. Part No.:
- TSM1NB60CH C5G
- Brand:
- Taiwan Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Taiwan Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | IPAK (TO-251) | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 10 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 39 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Number of Elements per Chip | 1 | |
| Length | 6.6mm | |
| Width | 2.3mm | |
| Typical Gate Charge @ Vgs | 6.1 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Height | 6.1mm | |
| Forward Diode Voltage | 1.4V | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Taiwan Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 1 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type IPAK (TO-251) | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 10 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 39 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Number of Elements per Chip 1 | ||
Length 6.6mm | ||
Width 2.3mm | ||
Typical Gate Charge @ Vgs 6.1 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Height 6.1mm | ||
Forward Diode Voltage 1.4V | ||
Minimum Operating Temperature -55 °C | ||
The Taiwan Semiconductor 600V, 1A, 10Ω, 3 pin, N-channel power MOSFET has single transistor configuration and enhancement channel mode. It is generally used in power supply, lighting and charger applications.
Advanced planar process
100% avalanche tested
Low RDS(ON) 8Ω (Typ.)
Low gate charge typical @ 6.1 nC (Typ.)
Low Crss typical @4.2pF (Typ.)
Operating temperature ranges between -55 °C to +150 °C
39W max. power dissipation
Gate threshold voltage ranges between 2.5V-4.5V
100% avalanche tested
Low RDS(ON) 8Ω (Typ.)
Low gate charge typical @ 6.1 nC (Typ.)
Low Crss typical @4.2pF (Typ.)
Operating temperature ranges between -55 °C to +150 °C
39W max. power dissipation
Gate threshold voltage ranges between 2.5V-4.5V