Taiwan Semiconductor N-Channel MOSFET, 55 A, 30 V Enhancement, 4-Pin TO-252 TSM090N03CP ROG
- RS Stock No.:
- 171-3608
- Mfr. Part No.:
- TSM090N03CP ROG
- Brand:
- Taiwan Semiconductor
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- RS Stock No.:
- 171-3608
- Mfr. Part No.:
- TSM090N03CP ROG
- Brand:
- Taiwan Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Taiwan Semiconductor | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 13mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 40W | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 7.5nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.8mm | |
| Height | 2.3mm | |
| Length | 6.5mm | |
| Standards/Approvals | No | |
| Automotive Standard | IEC 61249 | |
| Select all | ||
|---|---|---|
Brand Taiwan Semiconductor | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 13mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 40W | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 7.5nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Width 5.8mm | ||
Height 2.3mm | ||
Length 6.5mm | ||
Standards/Approvals No | ||
Automotive Standard IEC 61249 | ||
The Taiwan Semiconductor 30V, 55A, 3+Tab pin, N-channel power MOSFET has single transistor configuration and enhancement channel mode.
RoHS compliant
150 °C maximum operating temperature
40W max. power dissipation
Gate threshold voltage ranges between 1V-2.5V
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