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MOSFETs
N-Channel MOSFET, 33 A, 100 V, 3-Pin DPAK Toshiba TK33S10N1Z
RS Stock No.:
171-2530
Mfr. Part No.:
TK33S10N1Z
Brand:
Toshiba
View all MOSFETs
Discontinued product
RS Stock No.:
171-2530
Mfr. Part No.:
TK33S10N1Z
Brand:
Toshiba
Technical Reference
Legislation and Compliance
Product Details
Specifications
Datasheet
ESD Control Selection Guide V1
RoHS Status: Exempt
Statement of conformity
COO (Country of Origin):
JP
Automotive
Switching Voltage Regulators
Motor Drivers
Low drain-source on-resistance: RDS(ON) = 8.2 mΩ (typ.) (VGS = 10 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 100 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA)
Attribute
Value
Channel Type
N
Maximum Continuous Drain Current
33 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+175 °C
Length
6.5mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Width
7mm
Number of Elements per Chip
1
Height
2.3mm
Automotive Standard
AEC-Q101
Forward Diode Voltage
1.2V