Toshiba N-Channel MOSFET, 30.8 A, 600 V, 5-Pin DFN TK31V60W5
- RS Stock No.:
- 171-2526P
- Mfr. Part No.:
- TK31V60W5
- Brand:
- Toshiba
Bulk discount available
Subtotal 10 units (supplied on a continuous strip)*
£48.20
(exc. VAT)
£57.80
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,999,998 unit(s) shipping from 31 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 - 98 | £4.82 |
| 100 - 498 | £4.39 |
| 500 - 998 | £4.02 |
| 1000 + | £3.705 |
*price indicative
- RS Stock No.:
- 171-2526P
- Mfr. Part No.:
- TK31V60W5
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 30.8 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | DFN | |
| Mounting Type | Surface Mount | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance | 109 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 240 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Typical Gate Charge @ Vgs | 105 nC @ 10 V | |
| Width | 8mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Length | 8mm | |
| Height | 0.85mm | |
| Forward Diode Voltage | 1.7V | |
Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 30.8 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type DFN | ||
Mounting Type Surface Mount | ||
Pin Count 5 | ||
Maximum Drain Source Resistance 109 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 240 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Typical Gate Charge @ Vgs 105 nC @ 10 V | ||
Width 8mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 8mm | ||
Height 0.85mm | ||
Forward Diode Voltage 1.7V | ||
RoHS Status: Exempt
- COO (Country of Origin):
- CN
Switching Voltage Regulators
Fast reverse recovery time: trr = 135 ns (typ.)
Low drain-source on-resistance: RDS(ON) = 0.087 Ω(typ.)
Easy to control Gate switching
Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1.5 mA)
Fast reverse recovery time: trr = 135 ns (typ.)
Low drain-source on-resistance: RDS(ON) = 0.087 Ω(typ.)
Easy to control Gate switching
Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1.5 mA)