N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP Toshiba TPH1R204PL
- RS Stock No.:
- 171-2521
- Mfr. Part No.:
- TPH1R204PL
- Brand:
- Toshiba
Stock information currently inaccessible
- RS Stock No.:
- 171-2521
- Mfr. Part No.:
- TPH1R204PL
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 150 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | SOP | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 2.1 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.4V | |
| Minimum Gate Threshold Voltage | 1.4V | |
| Maximum Power Dissipation | 132 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Width | 5mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 74 nC @ 10 V | |
| Length | 5mm | |
| Height | 0.95mm | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 150 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type SOP | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 2.1 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.4V | ||
Minimum Gate Threshold Voltage 1.4V | ||
Maximum Power Dissipation 132 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Width 5mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 74 nC @ 10 V | ||
Length 5mm | ||
Height 0.95mm | ||
Forward Diode Voltage 1.2V | ||
RoHS Status: Exempt
- COO (Country of Origin):
- MY
High-speed switching
Small gate charge: QSW = 17 nC (typ.)
Small output charge: Qoss = 56 nC (typ.)
Low drain-source on-resistance: RDS(ON) = 1.0 mΩ (typ.) (VGS = 10 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)
Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 0.5 mA)
Small gate charge: QSW = 17 nC (typ.)
Small output charge: Qoss = 56 nC (typ.)
Low drain-source on-resistance: RDS(ON) = 1.0 mΩ (typ.) (VGS = 10 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)
Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 0.5 mA)