Toshiba Type N-Channel MOSFET, 8 A, 60 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 171-2501P
- Mfr. Part No.:
- TK8S06K3L
- Brand:
- Toshiba
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£33.20
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£39.85
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In Stock
- Plus 1,360 unit(s) shipping from 29 June 2026
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Units | Per unit |
|---|---|
| 50 - 90 | £0.664 |
| 100 - 990 | £0.582 |
| 1000 + | £0.517 |
*price indicative
- RS Stock No.:
- 171-2501P
- Mfr. Part No.:
- TK8S06K3L
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 25W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 2.3mm | |
| Length | 6.5mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 25W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 2.3mm | ||
Length 6.5mm | ||
Automotive Standard AEC-Q101 | ||
RoHS Status: Exempt
- COO (Country of Origin):
- JP
Automotive
Motor Drivers
DC-DC Converters
Switching Voltage Regulators
Low drain-source on-resistance: RDS(ON) = 43 mΩ (typ.) (VGS = 10 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 60 V)
Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA