Toshiba Dual N/P-Channel MOSFET, 500 mA, 20 V, 6-Pin SOT-563 SSM6L36FE

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Packaging Options:
RS Stock No.:
171-2497
Mfr. Part No.:
SSM6L36FE
Brand:
Toshiba
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Brand

Toshiba

Channel Type

N, P

Maximum Continuous Drain Current

500 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-563

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.52 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.35V

Maximum Power Dissipation

150 mW

Maximum Gate Source Voltage

±10 V

Typical Gate Charge @ Vgs

1.23 nC @ 4 V

Width

1.6mm

Maximum Operating Temperature

+150 °C

Length

1.2mm

Number of Elements per Chip

2

Height

0.55mm

COO (Country of Origin):
JP
1.5-V drive
Low ON-resistance Q1 Nch: Ron = 1.52Ω (max) (@VGS = 1.5 V)
Ron = 1.14Ω (max) (@VGS = 1.8 V)
Ron = 0.85Ω (max) (@VGS = 2.5 V)
Ron = 0.66Ω (max) (@VGS = 4.5 V)
Ron = 0.63Ω (max) (@VGS = 5.0 V)
Q2 Pch: Ron = 3.60Ω (max) (@VGS = -1.5 V)
Ron = 2.70Ω (max) (@VGS = -1.8 V)
Ron = 1.60Ω (max) (@VGS = -2.8 V)
Ron = 1.31Ω (max) (@VGS = -4.5 V)