Toshiba P-Channel MOSFET, 34 A, 30 V, 8-Pin SOP TPCA8128
- RS Stock No.:
- 171-2430
- Mfr. Part No.:
- TPCA8128
- Brand:
- Toshiba
Stock information currently inaccessible
- RS Stock No.:
- 171-2430
- Mfr. Part No.:
- TPCA8128
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 34 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOP | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 6.7 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 0.8V | |
| Maximum Power Dissipation | 45 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Width | 5mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 115 nC @ 10 V | |
| Length | 6mm | |
| Height | 0.95mm | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type P | ||
Maximum Continuous Drain Current 34 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOP | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 6.7 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 0.8V | ||
Maximum Power Dissipation 45 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +20 V | ||
Number of Elements per Chip 1 | ||
Width 5mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 115 nC @ 10 V | ||
Length 6mm | ||
Height 0.95mm | ||
Forward Diode Voltage 1.2V | ||
RoHS Status: Exempt
- COO (Country of Origin):
- MY
Small footprint due to compact and slim package
Low drain-source ON resistance : RDS (ON) = 3.7 mΩ (typ.)
Low leakage current : IDSS = −10 μA (max) (VDS = −30 V)
Enhancement mode
Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −0.5 m A )
Low drain-source ON resistance : RDS (ON) = 3.7 mΩ (typ.)
Low leakage current : IDSS = −10 μA (max) (VDS = −30 V)
Enhancement mode
Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −0.5 m A )