P-Channel MOSFET, 8 A, 60 V, 3-Pin DPAK Toshiba TJ8S06M3L
- RS Stock No.:
- 171-2415
- Mfr. Part No.:
- TJ8S06M3L
- Brand:
- Toshiba
Available to back order for despatch 27/01/2025
Added
Price Each (On a Reel of 2000)
£0.417
(exc. VAT)
£0.50
(inc. VAT)
| Units | Per unit | Per Reel* |
| 2000 + | £0.417 | £834.00 |
| *price indicative | ||
- RS Stock No.:
- 171-2415
- Mfr. Part No.:
- TJ8S06M3L
- Brand:
- Toshiba
Technical Reference
Legislation and Compliance
RoHS Status: Exempt
- COO (Country of Origin):
- JP
Product Details
Applications
Automotive
Motor Drivers
DC-DC Converters
Switching Voltage Regulators
Features
Low drain-source on-resistance: RDS(ON) = 80 mΩ (typ.) (VGS = -10 V)
Low leakage current: IDSS = -10 μA (max) (VDS = -60V)
Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA)
Automotive
Motor Drivers
DC-DC Converters
Switching Voltage Regulators
Features
Low drain-source on-resistance: RDS(ON) = 80 mΩ (typ.) (VGS = -10 V)
Low leakage current: IDSS = -10 μA (max) (VDS = -60V)
Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA)
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 8 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 130 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 27 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +10 V |
| Width | 7mm |
| Number of Elements per Chip | 1 |
| Length | 6.5mm |
| Maximum Operating Temperature | +175 °C |
| Typical Gate Charge @ Vgs | 19 nC @ 10 V |
| Automotive Standard | AEC-Q101 |
| Forward Diode Voltage | 1.2V |
| Height | 2.3mm |